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EE-SX670A Photo Microsensor
Description
Omron EE-SX670A Slot-type Photo Microsensor
Type: | Grooved Type (Standard) |
Luminous method: | Non-modulated |
Sensing method: | Through-beam type |
Sensing distance: | 5 mm (slot width) |
Operation mode: | Dark-ON/Light-ON (selectable) |
Standard sensing object: | Opaque object (2 x 0.8 mm min.) |
Differential distance elements: | 0.025 mm max. |
Light source (Peak wavelength): | Infrared LED (940 nm) |
Indicator: | No incident light (red) |
Power supply voltage: | 5 to 24 VDC ±10% (ripple (p-p)10% max.) |
Current consumption: | 12 mA max. (L terminal open) |
Control output (Output type): | NPN open-collector output |
Control output (Load power supply voltage): | 5 to 24 VDC |
Control output (Load current): | 100 mA max. |
Control output (Residual voltage): | 0.8 V max. (at 100 mA load current) 0.4 V max. (at 40 mA load current) |
Protection circuits: | Output short-cut protection |
Response frequency elements: | 1 kHz min. (average 3 kHz) |
Illumination on the surface receiver: | Fluorescent light: 1000 lx max. |
Ambient temperature: | Operating: -25 to 55 ℃ Storage: -30 to 80 ℃ |
Ambient humidity: | Operating: 5 to 85% RH Storage: 5 to 95% RH |
Vibration resistance: | 20 to 2000 Hz, peak acceleration 100 m/s**2, 1.5-mm double amplitude 2 h each in X, Y, and Z directions (4 min periods) |
Shock resistance: | 500 m/s**2, 3 times each in X, Y, and Z directions |
Degree of protection (IEC60529): | IP50 |
Connection method: | Connector type (direct soldering possible) |
Material: | Case: Polybutylene phthalate (PBT) Emitter/Receiver Cover: Polycarbonate(PC) |